Tirthajyoti Sarkar

A multi-stage optically-triggered power system. At least one triggering stage is responsive to at least one optical trigger to directly create photogeneration of carriers in the at least one triggering stage and thus generate at least one output signal. At least one main power device stage coupled to the at least one triggering stage is responsive to the at least one generated output signal to activate the at least one main power device stage. The at least one triggering stage and the at least… Show more

A multi-stage optically-triggered power system. At least one triggering stage is responsive to at least one optical trigger to directly create photogeneration of carriers in the at least one triggering stage and thus generate at least one output signal. At least one main power device stage coupled to the at least one triggering stage is responsive to the at least one generated output signal to activate the at least one main power device stage. The at least one triggering stage and the at least one main power device stage may be monolithically integrated. Show less

A power device is provided in an optically-triggered power system having a controller for generating electrical control signals and a converter for converting the electrical control signals to optical control signals. The power device includes a pair of terminals and a P-body region provided adjacent an N+ source region. An optical window is provided at least partially over the P-body region, and an N− drift region is provided between the two terminals. The P-body region causes current to… Show more

A power device is provided in an optically-triggered power system having a controller for generating electrical control signals and a converter for converting the electrical control signals to optical control signals. The power device includes a pair of terminals and a P-body region provided adjacent an N+ source region. An optical window is provided at least partially over the P-body region, and an N− drift region is provided between the two terminals. The P-body region causes current to conduct between the first and second terminal through the N− drift region when an optical control signal is incident on the optical window. Show less

An integrated circuit (e.g., a downstream integrated circuit) can be protected from undesirable power conditions (e.g., overvoltage conditions, overcurrent condition) using a protection device. The protection device, however, may not be configured to provide protection in response to each of the various types of undesirable power conditions that can occur such as a current in-rush upon activation, a current surge, and/or so forth. Accordingly, the protection device selected for power protection… Show more

An integrated circuit (e.g., a downstream integrated circuit) can be protected from undesirable power conditions (e.g., overvoltage conditions, overcurrent condition) using a protection device. The protection device, however, may not be configured to provide protection in response to each of the various types of undesirable power conditions that can occur such as a current in-rush upon activation, a current surge, and/or so forth. Accordingly, the protection device selected for power protection may not provide adequate protection of the integrated circuit or associated components in a desirable fashion. In addition, other components included in the integrated circuit may be increased in size to compensate for the inadequacies of the protection device in response to certain types of undesirable power conditions. Thus, a need exists for systems, methods, and apparatus to address the shortfalls of present technology and to provide other new and innovative features.

In one general aspect, an apparatus can include a junction-less, gate-controlled voltage clamp device having a gate terminal coupled to a voltage reference device.

The details of one or more implementations are set forth in the accompanying drawings and the description. Other features will be apparent from the description and drawings, and from the claims. Show less

In one general aspect, an apparatus can include a semiconductor substrate, and a trench defined within the semiconductor substrate and having a depth aligned along a vertical axis, a length aligned along a longitudinal axis, and a width aligned along a horizontal axis. The apparatus includes a dielectric disposed within the trench, and an electrode disposed within the dielectric and insulated from the semiconductor substrate by the dielectric. The semiconductor substrate can have a portion… Show more

In one general aspect, an apparatus can include a semiconductor substrate, and a trench defined within the semiconductor substrate and having a depth aligned along a vertical axis, a length aligned along a longitudinal axis, and a width aligned along a horizontal axis. The apparatus includes a dielectric disposed within the trench, and an electrode disposed within the dielectric and insulated from the semiconductor substrate by the dielectric. The semiconductor substrate can have a portion aligned vertically and adjacent the trench, and the portion of the semiconductor substrate can have a conductivity type that is continuous along an entirety of the depth of the trench. The apparatus is biased to a normally-on state. Show less

In one general aspect, an apparatus can include a load terminal, and a power source terminal. The apparatus can include a current limiter coupled to the load terminal and coupled to the power terminal. The current limiter can be configured to limit a current from the power source terminal to the load terminal using an electric field activated in response to a difference in voltage between the power source terminal and the load terminal.